•  
  •  
 

Turkish Journal of Physics

Abstract

This study investigates the influence of key deposition parameters on the optoelectronic properties of Molybdenum (Mo) films fabricated via DC magnetron sputtering. The results demonstrate that increasing the Argon gas pressure significantly raises the sheet resistance, primarily due to increased porosity and defect formation. In contrast, films deposited at lower pressures exhibit higher conductivity due to their denser morphology. The substrate temperature also plays a critical role in determining crystallographic structure and electrical performance. Mo bilayer films deposited at 250 °C show a much lower sheet resistance compared to room temperature (RT) growth. Additionally, increasing the total film thickness from 500 nm to 900 nm improves crystallinity, enlarges grain size, and reduces dislocation density. X-ray diffraction (XRD) analysis confirms a predominant (110) orientation, while UV-Vis spectroscopy indicates enhanced reflectance in the near-infrared (NIR) region, reaching up to 70%. These findings provide valuable insights for optimizing Mo thin films to achieve superior conductivity, mechanical stability, and optical performance.

Author ORCID Identifier

FİLİZ KELEŞ: 0000-0003-4548-489X

ABDULLAH ATILGAN: 0000-0002-5624-3664

ELİF DAMGACI: 0000-0003-2119-1435

AYŞE SEYHAN: 0000-0001-8090-1404

ABDULLAH YILDIZ: 0000-0003-4137-6971

DOI

10.55730/1300-0101.2789

Keywords

Molybdenum thin films, DC magnetron sputtering, film thickness, working gas pressure, substrate temperature

First Page

233

Last Page

243

Publisher

The Scientific and Technological Research Council of Türkiye (TÜBİTAK)

Creative Commons License

Creative Commons Attribution 4.0 International License
This work is licensed under a Creative Commons Attribution 4.0 International License.

Download

Included in

Physics Commons

Share

COinS