Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)

Authors

İLKNUR GÜNDÜZ AYKAÇ
AYKUT CAN ÖNEL
BURCU TOYDEMİR YAŞASUN
LEYLA ÇOLAKEROL ARSLAN

DOI

10.3906/fiz-1909-17

Abstract

We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mndoped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and ~250K, respectively. Ferromagnetic Mn5 Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5 Gex Si3-x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.

Keywords

Mn-Ge ferromagnetism, solid phase epitaxy, X-ray photoelectron spectroscopy depth profiling

First Page

67

Last Page

76

Recommended Citation

AYKAÇ, İLKNUR GÜNDÜZ; ÖNEL, AYKUT CAN; YAŞASUN, BURCU TOYDEMİR; and ARSLAN, LEYLA ÇOLAKEROL (2020) "Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)," Turkish Journal of Physics: Vol. 44: No. 1, Article 7. https://doi.org/10.3906/fiz-1909-17
Available at: https://journals.tubitak.gov.tr/physics/vol44/iss1/7