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Turkish Journal of Physics

DOI

10.3906/fiz-1803-6

Abstract

This work was prepared in two sections; the first section describes how to alloy Schottky diodes and aims to understand how metal alloys affect the essential parameters of Schottky diodes at the metal-semiconductor interface. The second section covers the varying differential depletion length in (Cu% Ni%)/n-Si/Al binary-alloyed Schottky diodes. After collecting data, the characteristics of Schottky diodes are calculated by plotting them with an increasing percentage ratio of the first element. We see that alloyed Schottky diode characteristics significantly depend on the mass percentage ratio of the first element. Significant results are seen: first, Vbi (built-in potential) directly affects the characteristics of Schottky diodes with a turning point occurring at the Vbi point on the axis, and second, the built-in potential plays a key role in Schottky diode characteristics. Estimation of the depletion length depends on the built-in potential. For the forward and reverse bias cases, the depletion length versus voltage graphs are identical, but with their symmetry mirrored. Analyzing the differential depletion lengths, it is easily seen that they have higher or lower values compared to the zero depletion length for the forward and reverse bias cases, respectively. When the depletion length formula is expanded in a series, new equations are obtained to show significant effects on Schottky diode characteristics.

Keywords

Schottky alloyed metal, depletion length, differential depletion length, metal?semiconductor interface

First Page

587

Last Page

599

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