•  
  •  
 

Turkish Journal of Physics

DOI

10.3906/fiz-1805-1

Abstract

The aim of this study is to investigate annealing effects on the electrical characteristics of aluminum oxide (Al2O3) MOS capacitors. Chemical changes after annealing have been characterized using the Fourier transform infrared spectroscopy prior to detailed electrical investigation. The influence of annealing temperature on electrical characteristics has been investigated by capacitance-voltage (C-V) and conductance-voltage (G/ω-V) curves. Effective oxide trap density (Nox), border trap densities (N2bt), and interface trap densities (Nit) were calculated during the electrical analysis. Remarkable changes in the measurements were observed depending on the annealing temperatures. The obtained results demonstrate that the optimum annealing temperature is 450 °C for the Al2O3-based devices.

Keywords

Al/Al2O3/p-Si (MOS) capacitors, annealing effect, interface states, series resistance

First Page

470

Last Page

477

Download

Included in

Physics Commons

Share

COinS