Effect of UV and gamma rays on bulk etching of the Pokalon track detector

Authors

MADHUSOODANAN PDMAJAM GANGADATHAN
VENKIDASUBRAMANIAN SANKAR
NISHANTH POTHIYODATHU
KRISHNA MURALEEDHARA VARIER

DOI

10.3906/fiz-1703-24

Abstract

Solid-state nuclear track detectors (SSNTDs) find applications in many fields of science and technology. Polycarbonates like CR-39 or Lexan are most widely used for such applications. Pokalon is a relatively new member of the polycarbonate family of SSNTDs. It has the same monomer as that of Makrofol. In the present work we have studied the bulk etching characteristics of Pokalon at different temperatures and normalities of NaOH etchant with and without magnetic stirring. The effect of UV and gamma irradiation on the bulk etch rate has also been studied. From the bulk etch rate values at different temperatures, we have determined the corresponding activation energies. Measurable enhancement of the bulk etch rates with accompanying reduction in the activation energies following UV and gamma irradiation suggests chain scission and bond breaking as possible mechanisms for these changes in the etching characteristics.

Keywords

Solid-state nuclear track detectors, Pokalon, chemical etching, bulk etch rate, UV, gamma irradiation

First Page

405

Last Page

409

Recommended Citation

GANGADATHAN, MADHUSOODANAN PDMAJAM; SANKAR, VENKIDASUBRAMANIAN; POTHIYODATHU, NISHANTH; and VARIER, KRISHNA MURALEEDHARA (2017) "Effect of UV and gamma rays on bulk etching of the Pokalon track detector," Turkish Journal of Physics: Vol. 41: No. 5, Article 3. https://doi.org/10.3906/fiz-1703-24
Available at: https://journals.tubitak.gov.tr/physics/vol41/iss5/3