Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates

Authors

ÖMER LÜTFİ ÜNSAL
BEŞİRE GÖNÜL

DOI

10.3906/fiz-1703-25

Abstract

A detailed comparative theoretical analysis on both carrier and photon confinement of dilute nitride direct bandgap GaN$_{x}$As$_{1-x-y}$P$_{y}$ with that of GaAs$_{1-y}$P$_{y}$ on Si substrates is presented. Model calculations indicate that optical confinement factor of GaAs$_{1-y}$P$_{y}$/GaP is greater than that of GaN$_{x}$As$_{1-x-y}$P$_{y}$/GaP for all concentrations. We have demonstrated that one can improve the optical confinement factor of GaN$_{x}$As$_{1-x-y}$P$_{y}$/GaP by using an Al$_{z}$Ga$_{1-z}$P cladding layer.

Keywords

Dilute nitride phosphide alloys, N incorporation, effective mass, band anticrossing model, carrier and photon confinement

First Page

337

Last Page

343

Recommended Citation

ÜNSAL, ÖMER LÜTFİ and GÖNÜL, BEŞİRE (2017) "Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates," Turkish Journal of Physics: Vol. 41: No. 4, Article 6. https://doi.org/10.3906/fiz-1703-25
Available at: https://journals.tubitak.gov.tr/physics/vol41/iss4/6