Turkish Journal of Physics
Abstract
A detailed comparative theoretical analysis on both carrier and photon confinement of dilute nitride direct bandgap GaN$_{x}$As$_{1-x-y}$P$_{y}$ with that of GaAs$_{1-y}$P$_{y}$ on Si substrates is presented. Model calculations indicate that optical confinement factor of GaAs$_{1-y}$P$_{y}$/GaP is greater than that of GaN$_{x}$As$_{1-x-y}$P$_{y}$/GaP for all concentrations. We have demonstrated that one can improve the optical confinement factor of GaN$_{x}$As$_{1-x-y}$P$_{y}$/GaP by using an Al$_{z}$Ga$_{1-z}$P cladding layer.
DOI
10.3906/fiz-1703-25
Keywords
Dilute nitride phosphide alloys, N incorporation, effective mass, band anticrossing model, carrier and photon confinement
First Page
337
Last Page
343
Recommended Citation
ÜNSAL, Ö. L, & GÖNÜL, B (2017). Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates. Turkish Journal of Physics 41 (4): 337-343. https://doi.org/10.3906/fiz-1703-25
