•  
  •  
 

Turkish Journal of Physics

DOI

10.3906/fiz-1604-14

Abstract

Structural, morphological, and optical properties of gallium sulfide film grown by chemical bath deposition have been investigated by XRD, SEM, AFM, and optical absorption techniques. The XRD spectrum indicated that the gallium sulfide film grew in crystalline form and the phase was identified as GaS. Gallium sulfide film had an island-like structure with a random distribution on a glass substrate. The particle size of the crystallites and surface roughness of the film were found to be 28-48 nm and 11.84 nm, respectively. The direct and indirect band gaps of gallium sulfide thin film were calculated from the absorption spectra as 2.76 and 2.10 eV, respectively.

Keywords

Gallium sulfide, chemical bath deposition technique, XRD, SEM, AFM

First Page

297

Last Page

303

Included in

Physics Commons

Share

COinS