Turkish Journal of Physics
DOI
10.3906/fiz-1408-3
Abstract
In this work, an analytical approach is presented for modeling the capacitance of crystalline silicon solar cells. Based on a one-dimensional modeling of the cell, the excess minority carrier density, the photovoltage, and the capacitance are calculated. The motivation of this work are two-fold: to show base doping density and illumination effects on the capacitance of silicon solar cells, and to propose a determination technique for both dark capacitance and base doping density from C-V characteristics.
Keywords
Solar cell, doping, capacitance, illumination
First Page
122
Last Page
127
Recommended Citation
BARRO, FABE IDRISSA; SANE, MOUSTAPHA; and ZOUMA, BERNARD
(2015)
"On the capacitance of crystalline silicon solar cells in steady state,"
Turkish Journal of Physics: Vol. 39:
No.
2, Article 3.
https://doi.org/10.3906/fiz-1408-3
Available at:
https://journals.tubitak.gov.tr/physics/vol39/iss2/3
