Turkish Journal of Physics
DOI
10.3906/fiz-1406-20
Abstract
We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.
Keywords
GaN nanomembranes, wet etching, photoelectrochemical etching, dry etching, liftoff techniques, e-beam lithography, surface charge lithography, photonic crystal membrane nanocavities, sensors
First Page
328
Last Page
368
Recommended Citation
TIGINYANU, ION and URSAKI, VEACESLAV
(2014)
"GaN nanostructuring for the fabrication of thin membranes and emerging applications,"
Turkish Journal of Physics: Vol. 38:
No.
3, Article 4.
https://doi.org/10.3906/fiz-1406-20
Available at:
https://journals.tubitak.gov.tr/physics/vol38/iss3/4
