Extended defects in GaN nanocolumns characterized by cathodoluminescence directly performed in a transmission electron microscope

Authors

FRANK BERTRAM
MARCUS MÜLLER
GORDON SCHMIDT
PETER VEIT
JÜRGEN CHRISTEN
ARNE URBAN
JOERG MALINDRETOS
ANGELA RIZZI

Abstract

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperature, the structural and optical properties of GaN nanocolumns, in particular extended defects like stacking faults and dislocations, have been characterized. The influence of the crystalline real structure on the emission properties using the capability of addressing individual stacking faults is comprehensively examined.

DOI

10.3906/fiz-1405-5

Keywords

Scanning transmission electron microscope, cathodoluminescence, extended defects, basal plane stacking fault, GaN nanocolumns

First Page

323

Last Page

327

Recommended Citation

BERTRAM, FRANK; MÜLLER, MARCUS; SCHMIDT, GORDON; VEIT, PETER; CHRISTEN, JÜRGEN; URBAN, ARNE; MALINDRETOS, JOERG; and RIZZI, ANGELA (2014) "Extended defects in GaN nanocolumns characterized by cathodoluminescence directly performed in a transmission electron microscope," Turkish Journal of Physics: Vol. 38: No. 3, Article 3. https://doi.org/10.3906/fiz-1405-5
Available at: https://journals.tubitak.gov.tr/physics/vol38/iss3/3