Turkish Journal of Physics
DOI
10.3906/fiz-1405-2
Abstract
In this review paper the authors will focus on Ge processing for integrated circuits. The key areas that require the most attention are substrates and integration, gate dielectrics, and access resistance. We will discuss each of these topics in turn, while also reviewing the most scaled Ge field-effect-transistor devices, and consider how modelling activities have matured for Ge in recent years.
Keywords
Semiconductors, Germanium, Processing, Substrates, Integration, Dielectrics, Resistance, Field-effect-transistors
First Page
463
Last Page
477
Recommended Citation
DUFFY, RAY; SHAYESTEH, MARYAM; and YU, RAN
(2014)
"Processing of germanium for integrated circuits,"
Turkish Journal of Physics: Vol. 38:
No.
3, Article 13.
https://doi.org/10.3906/fiz-1405-2
Available at:
https://journals.tubitak.gov.tr/physics/vol38/iss3/13
