XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate

Authors

EBRU ŞENADIM TÜZEMEN
HÜLYA ŞAHİN
KAMURAN KARA
SEZAİ ELAGÖZ
RAMAZAN ESEN

DOI

10.3906/fiz-1301-17

Abstract

A ZnO:Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The ZnO:Al thin film was thermally annealed for 1 h at 2 different temperatures in air. The film structure was investigated as a function of annealing temperature by X-ray diffraction (XRD). ZnO:Al film annealed at 500 °C by PFCVAD method resulted in an amorphous film. However, after annealing ZnO:Al film at 600 °C, it showed (100) and (002) peaks at around 32° and 34°, respectively. The chemical state of ZnO:Al (AZO) film on GaAs substrate was investigated by using X-ray photoelectron spectroscopy (XPS). The dependence of optical properties on annealing was investigated by using a UV-VIS-NIR spectrophotometer. We also obtained the energy gap of ZnO:Al thin film by diffused reflectance spectra using the Kubelka--Munk function.

Keywords

Al-doped zinc oxide, annealing temperature, diffuse and specular reflectance, optical band gap

First Page

111

Last Page

117

Recommended Citation

TÜZEMEN, EBRU ŞENADIM; ŞAHİN, HÜLYA; KARA, KAMURAN; ELAGÖZ, SEZAİ; and ESEN, RAMAZAN (2014) "XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate," Turkish Journal of Physics: Vol. 38: No. 1, Article 13. https://doi.org/10.3906/fiz-1301-17
Available at: https://journals.tubitak.gov.tr/physics/vol38/iss1/13