We have formed the ideal Co/n-GaAs Schottky barrier diodes (SBDs) by magnetron DC sputtering. The experimental current-voltage data of the Co/n-GaAs SBD are almost independent of the sample temperature and quite well obey the thermionic emission model from 100 K to 320 K. We have showed that the temperature coefficient of the barrier height can be determined using Norde's method instead of the temperature-dependent capacitance-voltage measurements or the flat-band barrier height values because the thermionic emission current dominates in the ideal SBDs. We have obtained a barrier height temperature coefficient value of \alpha = 0.41 meV/K for Co/n-GaAs SBDs used in this work, which is in close agreement with values reported for the metal/n-GaAs Schottky diodes in the literature.
Schottky barrier diode, Norde's method, GaAs, temperature coefficient of the barrier height
"Determination of barrier height temperature coefficient by Norde's method in ideal Co/n-GaAs Schottky contacts,"
Turkish Journal of Physics: Vol. 36:
2, Article 9.
Available at: https://journals.tubitak.gov.tr/physics/vol36/iss2/9