Determination of barrier height temperature coefficient by Norde's method in ideal Co/n-GaAs Schottky contacts

Authors

ABDULMECİT TURUT

DOI

10.3906/fiz-1103-8

Abstract

We have formed the ideal Co/n-GaAs Schottky barrier diodes (SBDs) by magnetron DC sputtering. The experimental current-voltage data of the Co/n-GaAs SBD are almost independent of the sample temperature and quite well obey the thermionic emission model from 100 K to 320 K. We have showed that the temperature coefficient of the barrier height can be determined using Norde's method instead of the temperature-dependent capacitance-voltage measurements or the flat-band barrier height values because the thermionic emission current dominates in the ideal SBDs. We have obtained a barrier height temperature coefficient value of \alpha = 0.41 meV/K for Co/n-GaAs SBDs used in this work, which is in close agreement with values reported for the metal/n-GaAs Schottky diodes in the literature.

Keywords

Schottky barrier diode, Norde's method, GaAs, temperature coefficient of the barrier height

First Page

235

Last Page

244

Recommended Citation

TURUT, ABDULMECİT (2012) "Determination of barrier height temperature coefficient by Norde's method in ideal Co/n-GaAs Schottky contacts," Turkish Journal of Physics: Vol. 36: No. 2, Article 9. https://doi.org/10.3906/fiz-1103-8
Available at: https://journals.tubitak.gov.tr/physics/vol36/iss2/9