Prediction of some mechanical and vibrational properties of GaX (X = P, As, Sb) semiconductor compounds

Authors

ANIL RATILAL JIVANI
ASHVINKUMAR RAMNIKLAL JANI

DOI

10.3906/fiz-1106-3

Abstract

The static elastic constants (C_{11}, C_{12} and C_{44}), pressure derivative of elastic constants, pressure derivative of bulk modulus, propagation velocities of longitudinal and transverse waves in [100], [110] and [111] directions and Young modulus are investigated through computations using the higher-order perturbation theory based on pseudopotential formalism, in which we have applied our own proposed model potential for GaP, GaAs and GaSb semiconductor compounds. In the present calculations, two local-field correction functions are employed to consider exchange and correlation effects. The numerical values of the aforesaid properties are found to be sensitive to the selection of the local-field correction function and showing a significant variation with the change in the function. The presently investigated numerical data is found to have, in general, good agreement with the available experiment data and other such theoretical values.

Keywords

Semiconductor compound, pseudopotential method, elastic constant, pressure derivative of bulk modulus, pressure derivative of elastic constants

First Page

215

Last Page

223

Recommended Citation

JIVANI, ANIL RATILAL and JANI, ASHVINKUMAR RAMNIKLAL (2012) "Prediction of some mechanical and vibrational properties of GaX (X = P, As, Sb) semiconductor compounds," Turkish Journal of Physics: Vol. 36: No. 2, Article 7. https://doi.org/10.3906/fiz-1106-3
Available at: https://journals.tubitak.gov.tr/physics/vol36/iss2/7