The influence of confinements on the photon flux spectra in amorphous silicon quantum dots

Authors

MOAFAK CADIM ABDULRIDA
NIDHAL MOOSA ABDUL-AMEER
SHATHA MOHAMMAD ABDUL-HAKEEM

DOI

10.3906/fiz-1107-7

Abstract

We have theoretically calculated the photon flux of radiative recombination in amorphous silicon quantum dots (a-SiQDs) at room temperature. These quantum dots have been ranged in their diameter 1 to 4 nm. The convolution of probability density function of deepest energy states of conduction P_C(E) and valence P_V(E) bands within the capture volume was adopted. The behavior of this function can be classified into four regions according to the quantum dot size. The effect of spatial and quantum confinements on the peak value of photon flux must be taken into account. We found that a blue shift is classified by the quantum confinement effect on the photon flux value, while a red shift appeared via the spatial confinement effect.

Keywords

Nanoscience, quantum dots, photon flux, quantum confinement

First Page

197

Last Page

205

Recommended Citation

ABDULRIDA, MOAFAK CADIM; ABDUL-AMEER, NIDHAL MOOSA; and ABDUL-HAKEEM, SHATHA MOHAMMAD (2012) "The influence of confinements on the photon flux spectra in amorphous silicon quantum dots," Turkish Journal of Physics: Vol. 36: No. 2, Article 5. https://doi.org/10.3906/fiz-1107-7
Available at: https://journals.tubitak.gov.tr/physics/vol36/iss2/5