Semiconducting properties of In_3Te_4 crystals: An experimental study

Authors

GADELKARIM ATA GAMAL
MOHAMED ALI ABOUZIED
MOHAMUD FOUAD SANAA

DOI

10.3906/fiz-1102-12

Abstract

IndiumTelluride In_3Te_4 crystal was characterized for electrical conductivity, Hall mobility, carrier concentration, and thermoelectric power (TEP) as a function of temperature in the range 202--526 K this was done with the aid of liquid nitrogen which enabled us to detect the intrinsic behavior. The crystals were prepared by a modified vertical Bridgman technique. Throughout these measurements various physical parameters, such as effective mass of charge carriers, carrier mobility, diffusion coefficient, and relaxation time for both majority and minority carriers were found.

Keywords

In_3Te_4, crystal growth, semiconductors, thermoelectric power, electrical conductivity Hall effect

First Page

31

Last Page

38

Recommended Citation

GAMAL, GADELKARIM ATA; ABOUZIED, MOHAMED ALI; and SANAA, MOHAMUD FOUAD (2012) "Semiconducting properties of In_3Te_4 crystals: An experimental study," Turkish Journal of Physics: Vol. 36: No. 1, Article 4. https://doi.org/10.3906/fiz-1102-12
Available at: https://journals.tubitak.gov.tr/physics/vol36/iss1/4