Influence of doping and heat treatments on carriers mobility in polycrystalline silicon thin films for photovoltaic application

Authors

BEDDIAF ZAIDI
BOUZID HADJOUDJA
HOUDA FELFLI
ALLAOUA CHIBANI

DOI

10.3906/fiz-1012-61

Abstract

In this work, we investigate the influence of doping as well as heat treatments on the mobility of the carriers in polycrystalline silicon layers. It was found that any increase in both parameters leads to an increase in the mobility of the carriers. Such mobilities were shown to be higher in boron doped layers that those doped with arsenic. Moreover, for strong arsenic doping, after the initial increase, we observed a saturation region followed by a final decrease of carrier mobility.

Keywords

Solar photovoltaic cells, polycrystalline silicon, grain boundary, carrier mobility, doping, heat treatments

First Page

185

Last Page

188

Recommended Citation

ZAIDI, BEDDIAF; HADJOUDJA, BOUZID; FELFLI, HOUDA; and CHIBANI, ALLAOUA (2011) "Influence of doping and heat treatments on carriers mobility in polycrystalline silicon thin films for photovoltaic application," Turkish Journal of Physics: Vol. 35: No. 2, Article 12. https://doi.org/10.3906/fiz-1012-61
Available at: https://journals.tubitak.gov.tr/physics/vol35/iss2/12