The low temperature resistivity of thermally evaporated antiferromagnetic Mn_{100-X} Ru_x thin films

Authors

FRANCIS KOFI AMPONG
FRANCIS BOAKYE

DOI

10.3906/fiz-1001-7

Abstract

Electrical resistivity measurements on thermally evaporated Mn_{100-x} Ru_x thin films (with x = 0.05 at.% Ru and x = 2.5 at.% Ru) have been carried out over the temperature range from 300 to 1.4 K. A behaviour typical of the bulk \alpha-Mn has been observed on the film with x = 0.05 at.% Ru. The Néel point of this specimen is established at 90 \pm 1 K which is typical of the bulk. This Néel point is raised to 100 \pm 1 K with x = 2.5 at.% Ru in \alpha-Mn. A relatively long range magnetic ordering was observed with x = 0.05 at.% Ru in \alpha-Mn indicating that the concentration of Ru has an adverse effect on antiferromagnetism in \alpha-Mn. The low temperature resistivity of the 2.50 at.% Ru in \alpha-Mn can be explained in terms of Kondo scattering.

Keywords

Resistivity, spin disorder scattering, kondo scattering

First Page

23

Last Page

29

Recommended Citation

AMPONG, FRANCIS KOFI and BOAKYE, FRANCIS (2011) "The low temperature resistivity of thermally evaporated antiferromagnetic Mn_{100-X} Ru_x thin films," Turkish Journal of Physics: Vol. 35: No. 1, Article 3. https://doi.org/10.3906/fiz-1001-7
Available at: https://journals.tubitak.gov.tr/physics/vol35/iss1/3