Photocurrent and surface recombination mechanisms in the In_xGa_{1-x}N\slashGaN different-sized quantum dot solar cells

Authors

HOSSEIN MOVLA
FOOZIEH SOHRABI
JAFAR FATHI
HASSAN BABAEI
ARASH NIKNIAZI
KHADIJE KHALILI
NIMA ES'HAGHI GORJI

DOI

10.3906/fiz-1002-19

Abstract

We present a p-i-n structured solar cell with stacked layers of In_xGa_{1-x}N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in In_xGa_{1-x}N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a ``rainbow'' solar cell can be designed.

Keywords

p-i-n Solar Cells, In_xGa_{1-x}N Quantum dots, photocurrent, surface recombination rate

First Page

97

Last Page

106

Recommended Citation

MOVLA, HOSSEIN; SOHRABI, FOOZIEH; FATHI, JAFAR; BABAEI, HASSAN; NIKNIAZI, ARASH; KHALILI, KHADIJE; and GORJI, NIMA ES'HAGHI (2010) "Photocurrent and surface recombination mechanisms in the In_xGa_{1-x}N\slashGaN different-sized quantum dot solar cells," Turkish Journal of Physics: Vol. 34: No. 2, Article 4. https://doi.org/10.3906/fiz-1002-19
Available at: https://journals.tubitak.gov.tr/physics/vol34/iss2/4