Turkish Journal of Physics
Abstract
We present a p-i-n structured solar cell with stacked layers of In_xGa_{1-x}N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in In_xGa_{1-x}N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a ``rainbow'' solar cell can be designed.
DOI
10.3906/fiz-1002-19
Keywords
p-i-n Solar Cells, In_xGa_{1-x}N Quantum dots, photocurrent, surface recombination rate
First Page
97
Last Page
106
Recommended Citation
MOVLA, H, SOHRABI, F, FATHI, J, BABAEI, H, NIKNIAZI, A, KHALILI, K, & GORJI, N. E (2010). Photocurrent and surface recombination mechanisms in the In_xGa_{1-x}N\slashGaN different-sized quantum dot solar cells. Turkish Journal of Physics 34 (2): 97-106. https://doi.org/10.3906/fiz-1002-19
