Transport property measurements of Bi_2Se_3 crystal grown by Bridgman method

Authors

M. P. DESHPANDE
NILESH N. PANDYA
M. N. PARMAR

DOI

10.3906/fiz-0811-8

Abstract

This paper deals with the growth of Bi_2Se_3 crystal by newly designed experimental set-up of Bridgman technique in our laboratory. Grown crystal is characterized by EDAX (Energy Dispersive Analysis of X-rays), XRD (X-ray Diffraction), low temperature thermopower measurements (17-284 K), resistivity measurements (16-294 K) and Hall Effect at room temperature in order to study its various properties. The surface study of the grown crystal using AFM (Atomic Force Microscopy) shows a hexagonal unit cell shape whose internal angle determined comes out to be nearly equal to 122.94° which has close resemblance with an angle of 120° of perfect internal angle of hexagon. Various parameters obtained from above measurements like lattice parameters, crystallite size and stacking fault probabilities are discussed in detail in the paper.

Keywords

Crystal growth, transport properties, thermoelectric materials, atomic force microscopy

First Page

139

Last Page

148

Recommended Citation

DESHPANDE, M. P.; PANDYA, NILESH N.; and PARMAR, M. N. (2009) "Transport property measurements of Bi_2Se_3 crystal grown by Bridgman method," Turkish Journal of Physics: Vol. 33: No. 3, Article 3. https://doi.org/10.3906/fiz-0811-8
Available at: https://journals.tubitak.gov.tr/physics/vol33/iss3/3