Transport property measurements of Bi_2Se_3 crystal grown by Bridgman method

Authors

M. P. DESHPANDE
NILESH N. PANDYA
M. N. PARMAR

Abstract

This paper deals with the growth of Bi_2Se_3 crystal by newly designed experimental set-up of Bridgman technique in our laboratory. Grown crystal is characterized by EDAX (Energy Dispersive Analysis of X-rays), XRD (X-ray Diffraction), low temperature thermopower measurements (17-284 K), resistivity measurements (16-294 K) and Hall Effect at room temperature in order to study its various properties. The surface study of the grown crystal using AFM (Atomic Force Microscopy) shows a hexagonal unit cell shape whose internal angle determined comes out to be nearly equal to 122.94° which has close resemblance with an angle of 120° of perfect internal angle of hexagon. Various parameters obtained from above measurements like lattice parameters, crystallite size and stacking fault probabilities are discussed in detail in the paper.

DOI

10.3906/fiz-0811-8

Keywords

Crystal growth, transport properties, thermoelectric materials, atomic force microscopy

First Page

139

Last Page

148

Recommended Citation

DESHPANDE, M. P.; PANDYA, NILESH N.; and PARMAR, M. N. (2009) "Transport property measurements of Bi_2Se_3 crystal grown by Bridgman method," Turkish Journal of Physics: Vol. 33: No. 3, Article 3. https://doi.org/10.3906/fiz-0811-8
Available at: https://journals.tubitak.gov.tr/physics/vol33/iss3/3