Turkish Journal of Physics
DOI
10.3906/fiz-0805-4
Abstract
The thermalized positron charge distribution is calculated as a function of pressure variation in GaAs. Calculations have been carried out via the independent particle method (IPM) coupled with the empirical pseudopotential method (EPM). Initial results show a clear asymmetrical positron charge distribution relative to the bond center. From this positron affinity we have calculated the ionicity character with respect to the pressure variation using our empirical formula. Our results show an agreement with the thermochemical phase diagram proposed by Phillips.
Keywords
Positron affinity, phase transition, band structure, semiconductor.
First Page
11
Last Page
19
Recommended Citation
SOUDINI, BELABBES
(2009)
"Prediction of the Pressure-Induced Phase Transition in GaAs by the Positron Affinity,"
Turkish Journal of Physics: Vol. 33:
No.
1, Article 2.
https://doi.org/10.3906/fiz-0805-4
Available at:
https://journals.tubitak.gov.tr/physics/vol33/iss1/2
