Theoretical Study of Electronic Properties of the Semi-Conductors AlN and GaN With the Empirical Pseudopotential Method EPM

Authors

KADDOUR BENCHERIF
MOHAMED SEHIL
HAMZA ABID
MOHAMED ELHADI LOUHIBI

DOI

-

Abstract

The electronic structure of binary compounds AlN and GaN are presented. We have used the empirical pseudo-potential method. Good agreement between the calculated results and experiment is obtained. The charge densities are presented for the sum of the four valence bands of both AlN and GaN.

Keywords

Empirical Pseudo-potential Method (EPM), nitride aluminium, nitride gallium compounds, III-N semi-conductors, wide band gap semi-conductors, energy gap, charge density

First Page

193

Last Page

197

Recommended Citation

BENCHERIF, KADDOUR; SEHIL, MOHAMED; ABID, HAMZA; and LOUHIBI, MOHAMED ELHADI (2008) "Theoretical Study of Electronic Properties of the Semi-Conductors AlN and GaN With the Empirical Pseudopotential Method EPM," Turkish Journal of Physics: Vol. 32: No. 4, Article 3. Available at: https://journals.tubitak.gov.tr/physics/vol32/iss4/3