Turkish Journal of Physics
DOI
-
Abstract
Green´s function method in bases sets of Linear Combinations of Atomic Orbitals (LCAO) is used to calculate the electronic structure of the (010) surface of GeSe semiconductor. The energy states in energy gaps, their origin, orbital content, resonances and local changes in the density of states due to the surface are discussed.
Keywords
Green´s function methods, Defects, Single crystal surfaces, Surface defects.
First Page
77
Last Page
84
Recommended Citation
JAHANGIRLI, Z. A. and ZARBALIYEV, M. Z. (2007) "Electronic Structure of Surfaces in GeSe Layered Semiconductor," Turkish Journal of Physics: Vol. 31: No. 2, Article 3. Available at: https://journals.tubitak.gov.tr/physics/vol31/iss2/3
