The dominant dark current transport mechanism in as-grown and CdCl_2 processed CdS/CdTe heterojunction solar cells for temperatures below 300~K was investigated. The current-voltage properties of these solar cells is explained via tunnelling enhanced bulk and interface recombination models which give a quantitative description of the electronic loss mechanisms in the chalcopyrite-based heterojunction solar cells. The temperature dependence of the saturation current and the diode ideality factors of the as-grown and CdCl_2 processed CdTe solar cells are shown to be well described by this model.
CdS/CdTe; Solar cell; Tunnelling; Recombination.
BAYHAN, HABİBE (2006) "Tunneling-Enhanced Recombination in Polycrystalline CdS/CdTe Solar Cells," Turkish Journal of Physics: Vol. 30: No. 2, Article 6. Available at: https://journals.tubitak.gov.tr/physics/vol30/iss2/6