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Turkish Journal of Physics

Authors

M. M. NASSARY

DOI

-

Abstract

Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136--563 K for GaTe compound grown in single crystal form by modified Bridgman technique. The crystals obtained had Positive-type conductivity with a hole concentration of 3.8 \times 10^{12} cm^{-3} at room temperature. Conductivity and Hall mobility at room temperature were evaluated as 4.4 \times 10^{-3} ohm^{-1} cm^{-1} and 7079 cm^2/V \cdot s, respectively. The energy gap width of 1.5 eV was found. The effective mass of holes and electrons at room temperature were 4.16 m_° and 0.1174 m_° , respectively

First Page

95

Last Page

102

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