Turkish Journal of Physics
DOI
-
Abstract
Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136--563 K for GaTe compound grown in single crystal form by modified Bridgman technique. The crystals obtained had Positive-type conductivity with a hole concentration of 3.8 \times 10^{12} cm^{-3} at room temperature. Conductivity and Hall mobility at room temperature were evaluated as 4.4 \times 10^{-3} ohm^{-1} cm^{-1} and 7079 cm^2/V \cdot s, respectively. The energy gap width of 1.5 eV was found. The effective mass of holes and electrons at room temperature were 4.16 m_° and 0.1174 m_° , respectively
Keywords
GaTe, Electrical conductivity, Thermoelectric power.
First Page
95
Last Page
102
Recommended Citation
NASSARY, M. M. (2006) "Peculiarities of the Electric and Thermoelectric Properties of GaTe," Turkish Journal of Physics: Vol. 30: No. 2, Article 4. Available at: https://journals.tubitak.gov.tr/physics/vol30/iss2/4
