Turkish Journal of Physics
DOI
-
Abstract
Transient Photoconductivity measurements have been made in vacuum evaporated thin films of Se_{0.80 - x}Ge_{0.20}Ag_x at different intensities, temperatures and illumination times. The films exhibit long-lived residual photoconductivity, called persistent photoconductivity, with an extremely slow decay rate. The persistent photoconductivity (PPC) increases with an increase in intensity and illumination time. However, this quantity decreases with increase in temperature. These results indicate that the decay of photoconductivity is not only governed by the carrier trapped in the intrinsic defects but also gets affected by the light induced defect creation through structural changes The persistent photoconductivity effect is found to be suppressed on increase of Ag concentration in a- Se_{0.80 - x}Ge_{0.20}Ag_x, which may be understood in terms of smaller effect of light induced defects due to higher concentration of inherent structural defects in dark at higher concentration of Ag.
Keywords
Persistent photoconductivity, Chalcogenide Glasses, Photoconductivity.
First Page
47
Last Page
56
Recommended Citation
SHARMA, R. S.; KUMAR, D.; and KUMAR, A. (2006) "Transient Photoconductivity in Amorphous Se-Ge-Ag System," Turkish Journal of Physics: Vol. 30: No. 1, Article 6. Available at: https://journals.tubitak.gov.tr/physics/vol30/iss1/6