Turkish Journal of Physics
DOI
-
Abstract
Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been applied to analyze the temperature dependence of the reverse current-voltage data. We suggest that Bardeen's model for a modified Schottky-like interfacial junction, that takes into account the effect of interfacial localized states, can be satisfactorily applied to describe the reverse current-voltage characteristics at bias voltages below 50 V.
Keywords
BPW34, PIN, Photodiode, reverse bias, current transport.
First Page
371
Last Page
378
Recommended Citation
BAYHAN, HABİBE and ÖZDEN, ŞADAN (2005) "Origins of Reverse Bias Currents in a Typical BPW34 Photodiode," Turkish Journal of Physics: Vol. 29: No. 6, Article 6. Available at: https://journals.tubitak.gov.tr/physics/vol29/iss6/6
