Turkish Journal of Physics
DOI
-
Abstract
This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the illumination of white light at 100~mW/cm^2. The room temperature photoconductivity for the same doping concentration of 10^{-4} (to develop H_2Se/SiH_4 and H_2S/SiH_4) is found to be higher in Se-doped -- than S-doped -- a-Si:H film due to a low defect density. From the measurement of intensity dependence of photoconductivity, it is found that the addition of Se and S changes the recombination mechanism from monomolecular, for low-doped films, to bimolecular at higher levels of doping of Se and S.
Keywords
Se, S, a-Si:H, Photoconductivity, recombination mechanism.
First Page
243
Last Page
248
Recommended Citation
SHARMA, SANJEEV KUMAR; GUPTA, HIMANSHU; KUMAR, RAJENDRA; and MEHRA, RAM MOHAN (2005) "Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films," Turkish Journal of Physics: Vol. 29: No. 4, Article 6. Available at: https://journals.tubitak.gov.tr/physics/vol29/iss4/6
