Some Physical Properties of \gamma Irradiated Ge_x(As_2Te_3)_{100 - x} Chalcogenide System

Authors

AFAF ABDEL-AAL
BAHIGA ABDEL-HAMEED MANSOUR
HODA MOHAMED EISSA

Abstract

The effect of \gamma -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Ge_x(As_2Te_3)_{100 - x} (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the \gamma -doses increase, the values of the allowed indirect optical energy gap E_{opt} for the different compositions decreases and the tail energy width increases.

DOI

-

Keywords

Chalcogenide-glasses; gamma-ray effects; visible-spectra, radiative-electrical-optical-properties; gamma-irradiation; transmission-edge-shift; defect-formation.

First Page

223

Last Page

232

Recommended Citation

ABDEL-AAL, A, MANSOUR, B. A, & EISSA, H. M (2005). Some Physical Properties of \gamma Irradiated Ge_x(As_2Te_3)_{100 - x} Chalcogenide System. Turkish Journal of Physics 29 (4): 223-232. https://doi.org/-