Turkish Journal of Physics
DOI
-
Abstract
This article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cu(In,Ga)Se_2 heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has been analyzed using a model based on the existence of a homogeneous distribution of bulk acceptors in the absorber Cu(In,Ga)Se_2 layer. This model reveals an emission from a distribution of hole traps centered at an activation energy of about 300 meV with a defect density of 1.2 \times 10^{17} eV^{-1} cm^{-3}. The band gap of the absorber layer is estimated to be about 1.46 eV which corresponds to a Ga content of about x \approx 0.7 with x the ratio Ga/(Ga+In).
Keywords
CIGS, solar cell, admittance spectroscopy, defect distribution.
First Page
17
Last Page
24
Recommended Citation
BAYHAN, HABİBE (2005) "Determination of Defect Distribution in a Ga-rich ZnO/CdS/Cu(In,Ga)Se_2 Solar Cell by Admittance Spectroscopy," Turkish Journal of Physics: Vol. 29: No. 1, Article 3. Available at: https://journals.tubitak.gov.tr/physics/vol29/iss1/3
