Single Mode Optical Radiation Distribution and Reflectivity Calculations in Novel-Hot Electron Light Emission and Lasing In Semiconductor Heterostructures VCSELs

Authors

EBRU ŞENADIM TÜZEMEN
YÜKSEL ERGUN

DOI

-

Abstract

In this work, we calculate the power reflectivity in vertical cavity surface emitting lasers (VCSELs) using a new method. In VCSELs, the stop band of the reflectivity spectrum should exhibit a dip at the lasing wavelength, which is a condition for lasing. This current approximation method gives a simple analytical expression to find the power reflectivity as a function of wavelength in the vicinity of lasing wavelength, \lambda_°. The proposed method can generally be applied to semiconductor VCSEL systems for a given lasing wavelength.

First Page

341

Last Page

347

Recommended Citation

TÜZEMEN, EBRU ŞENADIM and ERGUN, YÜKSEL (2004) "Single Mode Optical Radiation Distribution and Reflectivity Calculations in Novel-Hot Electron Light Emission and Lasing In Semiconductor Heterostructures VCSELs," Turkish Journal of Physics: Vol. 28: No. 5, Article 7. Available at: https://journals.tubitak.gov.tr/physics/vol28/iss5/7