Single Mode Optical Radiation Distribution and Reflectivity Calculations in Novel-Hot Electron Light Emission and Lasing In Semiconductor Heterostructures VCSELs

Authors

EBRU ŞENADIM TÜZEMEN
YÜKSEL ERGUN

Abstract

In this work, we calculate the power reflectivity in vertical cavity surface emitting lasers (VCSELs) using a new method. In VCSELs, the stop band of the reflectivity spectrum should exhibit a dip at the lasing wavelength, which is a condition for lasing. This current approximation method gives a simple analytical expression to find the power reflectivity as a function of wavelength in the vicinity of lasing wavelength, \lambda_°. The proposed method can generally be applied to semiconductor VCSEL systems for a given lasing wavelength.

DOI

-

First Page

341

Last Page

347

Recommended Citation

TÜZEMEN, E. Ş, & ERGUN, Y (2004). Single Mode Optical Radiation Distribution and Reflectivity Calculations in Novel-Hot Electron Light Emission and Lasing In Semiconductor Heterostructures VCSELs. Turkish Journal of Physics 28 (5): 341-347. https://doi.org/-