Turkish Journal of Physics
DOI
-
Abstract
Single crystals of In_{4}Te_{3} grown by modified Bridgman technique were characterized by measurement of the Hall coefficient, electrical conductivity and Seebeck coefficient, in the temperature range 200-500 K. The investigated sample was found to be of P-type conductivity.R_{H} at room temperature was 3.1 \times 10^{14} cm^{3}/coul and the carrier concentration was evaluated as 2.007 \times 10^{14} cm^{3}. Energy gap \Delta E_{g} and ionization energy \Delta E_{a} were estimated as 0.28 eV and 0.12 eV, respectively, and the diffusion coefficient, the diffusion length, the mean free time between collision and the effective mass of carriers were evaluated. The variation of the Hall mobility with temperature was studied and hence the scattering mechanism is discussed.
Keywords
In_{4}Te_{3}, Hall and Seebeck coefficients, Electrical conductivity
First Page
211
Last Page
218
Recommended Citation
DONGOL, M.; NASSARY, M. M.; GERGES, M. K.; and SEBAG, M. A. (2003) "Characterization of In_{4}Te_{3} Single crystals," Turkish Journal of Physics: Vol. 27: No. 3, Article 7. Available at: https://journals.tubitak.gov.tr/physics/vol27/iss3/7
