Laser induced diffusion of antimony in silicon was obtained using a Nd:YAG pulsed laser. The irradiation of antimony-coated silicon by laser beam allowed melting and diffusion of antimony inside the silicon. Diodes were fabricated. Laser beam energy and substrate temperature played a major role in electrical sheet conductivity I-V, and C-V characteristics of the fabricated diodes. High laser energy reduced the electrical sheet conductivity and dominated the recombination current due to the generation-recombination process and trapping centers. On the other hand, the diffusion current dominated for diodes fabricated under heating conditions of the sample during laser irradiation. The C-V measurements of fabricated diodes revealed that the junction were of abrupt type.
Laser annealing, LID doping, Silicon devices, Sb dopants
ISMAIL, RAID A. and HADI, ASEEL A. (2003) "Electrical Characteristics of Si Doped with Sb by Laser Annealing," Turkish Journal of Physics: Vol. 27: No. 2, Article 7. Available at: https://journals.tubitak.gov.tr/physics/vol27/iss2/7