We investigated theoretically the change of electronic properties of Si \delta-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.
\delta-doped GaAs, electronic structure, temperature-dependence.
ÖZTÜRK, EMİNE (2002) "The Temperature Dependence of the Electronic Structure of Si \delta-doped GaAs," Turkish Journal of Physics: Vol. 26: No. 6, Article 8. Available at: https://journals.tubitak.gov.tr/physics/vol26/iss6/8