Abstract

We investigated theoretically the change of electronic properties of Si \delta-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.

DOI

Keywords

\delta-doped GaAs, electronic structure, temperature-dependence.

First Page

465

Last Page

472

Recommended Citation

ÖZTÜRK, E (2002). The Temperature Dependence of the Electronic Structure of Si \delta-doped GaAs. Turkish Journal of Physics 26 (6): 465-472. https://doi.org/-

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