Abstract

Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substrate temperature on the electrical and optical properties of the films have been studied.

DOI

Keywords

A. Hydrogenated amorphous silicon nitride; B. Substrate temperature; C. Dark conductivity; D. Photoconductivity; E. Optical gap.

First Page

269

Last Page

276

Recommended Citation

GÜNGÖR, T, & TOLUNAY, H (2002). Effects of Substrate Temperature on Properties of a-SiN_x:H Films. Turkish Journal of Physics 26 (4): 269-276. https://doi.org/-

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