Effects of Substrate Temperature on Properties of a-SiN_x:H Films

Authors

TAYYAR GÜNGÖR
HÜSEYİN TOLUNAY

DOI

-

Abstract

Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substrate temperature on the electrical and optical properties of the films have been studied.

Keywords

A. Hydrogenated amorphous silicon nitride; B. Substrate temperature; C. Dark conductivity; D. Photoconductivity; E. Optical gap.

First Page

269

Last Page

276

Recommended Citation

GÜNGÖR, TAYYAR and TOLUNAY, HÜSEYİN (2002) "Effects of Substrate Temperature on Properties of a-SiN_x:H Films," Turkish Journal of Physics: Vol. 26: No. 4, Article 4. Available at: https://journals.tubitak.gov.tr/physics/vol26/iss4/4