Turkish Journal of Physics
DOI
-
Abstract
The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass and single cyrstalline silicon substrates by means of d.c. magnetron sputtering technique. a-Si:H/glass and a-Si:H/c-Si samples were annealed in the temperature range of 23-250^oC, 23-200^oC and 600-1050^oC, respectively. The effect of annealing on the a-Si:H films were examined by means of Infrared vibrational transmittance spectrum technique (IR) in the wavenumber range 4000-400 cm^{-1} and Scanning Electron Microsope (SEM). The results were interpreted in terms of hydrogen diffusion.
First Page
53
Last Page
60
Recommended Citation
SERİN, NECMİ; SERİN, TÜLAY; ÖZDEMİR, ALİ RIZA; ALKAN, BORA; TARIMCI, ÇELİK; and ÜNAL, BASRİ (2002) "The Determination of Thermal Annealing Effect on a-Si:H Films Coated on Glass and on Single Crystalline of Silicon," Turkish Journal of Physics: Vol. 26: No. 1, Article 9. Available at: https://journals.tubitak.gov.tr/physics/vol26/iss1/9
