Turkish Journal of Physics
DOI
-
Abstract
Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films have been measured in the temperature range 420K-100K at four different photon fluxes. It was observed that both dark conductivity and photoconductivity increase with increasing rf power density.
Keywords
A. Dark conductivity; B. Photoconductivity; Rf power density; D. Activation energy; E.Hydrogenated amorphous silicon.
First Page
25
Last Page
28
Recommended Citation
TOLUNAY, HÜSEYİN (2002) "Effect of rf power on the electrical properties of glow-discharge a-Si:H," Turkish Journal of Physics: Vol. 26: No. 1, Article 4. Available at: https://journals.tubitak.gov.tr/physics/vol26/iss1/4
