Temperature Dependence of Galvanomagnetic Properties for Lightly Doped N-Type Si

Authors

AYTUNÇ ATEŞ
BEKİR GÜRBULAK
SEYDİ DOĞAN
MUHAMMET YILDIRIM
SEBAHATTİN TÜZEMEN

DOI

-

Abstract

The temperature dependence of Hall and magnetoresistance effects in n-type Si having a resistivity of 1400 {\Omega } cm at room temperature is studied in the temperature range of 210-320 K. The variation of transverse magnetoresistance as a function of temperature is similar to the longitudinal magnetoresistance variation in < 001 > and < 1\bar {1}0 > n-Si the samples. It is observed that, in < 001 > sample, the transverse and longitudinal magnetoresistance variation is greater than that in the < 1\bar {1}0 > sample. In both samples, the temperature dependences of magnetoresistance is in accordance to double space anisotropy parameters. In both samples, the transverse and longitudinal magnetoresistance coefficents increase with increasing temperature in the temperature range 210-240 K and decrease with increasing temperature in the temperature range 240-320 K. The carrier concentration increases with increasing temperature and Hall mobility increases with temperature up to 260 K and decreases with increasing temperature above 260 K.

First Page

73

Last Page

80

Recommended Citation

ATEŞ, AYTUNÇ; GÜRBULAK, BEKİR; DOĞAN, SEYDİ; YILDIRIM, MUHAMMET; and TÜZEMEN, SEBAHATTİN (2002) "Temperature Dependence of Galvanomagnetic Properties for Lightly Doped N-Type Si," Turkish Journal of Physics: Vol. 26: No. 1, Article 12. Available at: https://journals.tubitak.gov.tr/physics/vol26/iss1/12