Impurity Conductivity in Semiconductors Resulting from Radiant Excitation

Authors

VAKHAB T. TOULANOV
AZIZA SH. DAVLETOVA
LESBEK T. TASHIMOV
KAMILA A. ORTAEVA

DOI

-

Abstract

This paper deals with the derivation of common formulae for induced impurity photosensibility with an arbitrary set of energy levels in the semiconductor gap. We give the expression for the real recombinational situation with two types of impurity levels as well. The basic properties and certain common peculiarities concerning induced photoconductivity in semiconductors are under consideration.

First Page

513

Last Page

522

Recommended Citation

TOULANOV, VAKHAB T.; DAVLETOVA, AZIZA SH.; TASHIMOV, LESBEK T.; and ORTAEVA, KAMILA A. (2001) "Impurity Conductivity in Semiconductors Resulting from Radiant Excitation," Turkish Journal of Physics: Vol. 25: No. 6, Article 4. Available at: https://journals.tubitak.gov.tr/physics/vol25/iss6/4