Turkish Journal of Physics
Abstract
Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH_4 and NH_3 . The dark conductivity (\sigma_d) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed sigma _d when the nitrogen content is increased.
DOI
-
Keywords
A. Dark Conductivity; B. Activation energy; C. Pre-exponential factor D. Hydrogenated amorphous silicon nitride
First Page
223
Last Page
228
Recommended Citation
TOLUNAY, H, & AY, İ (2001). The Temperature Dependence of Dark Conductivity in Hydrogenated Amorphous SiN_x Films. Turkish Journal of Physics 25 (3): 223-228. https://doi.org/-
