Turkish Journal of Physics
Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH_4 and NH_3 . The dark conductivity (\sigma_d) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed sigma _d when the nitrogen content is increased.
A. Dark Conductivity; B. Activation energy; C. Pre-exponential factor D. Hydrogenated amorphous silicon nitride
TOLUNAY, HÜSEYİN and AY, İLKER (2001) "The Temperature Dependence of Dark Conductivity in Hydrogenated Amorphous SiN_x Films," Turkish Journal of Physics: Vol. 25: No. 3, Article 6. Available at: https://journals.tubitak.gov.tr/physics/vol25/iss3/6