Turkish Journal of Physics
DOI
-
Abstract
Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH_4 and NH_3 . The dark conductivity (\sigma_d) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed sigma _d when the nitrogen content is increased.
Keywords
A. Dark Conductivity; B. Activation energy; C. Pre-exponential factor D. Hydrogenated amorphous silicon nitride
First Page
223
Last Page
228
Recommended Citation
TOLUNAY, HÜSEYİN and AY, İLKER (2001) "The Temperature Dependence of Dark Conductivity in Hydrogenated Amorphous SiN_x Films," Turkish Journal of Physics: Vol. 25: No. 3, Article 6. Available at: https://journals.tubitak.gov.tr/physics/vol25/iss3/6
