Turkish Journal of Physics
DOI
-
Abstract
The electrical properties of a-Si:( H ) and a- SiN ):( H ) films prepared by plasma deposition from SiH_4+NH_3 gas mixtures have been investigated. We observed anomalous peaks in the temperature dependent dark conductivity curves of annealed a-Si:H and a-SiN:H samples when the temperatures were increased from 90 K to room temperature at a constant heating rate. To study the surface adsorption effect, vacuum cryostat pressure dependence of these peaks are investigated. We have also studied the effect of nitrogen on these observed peaks in dark conductivity.
Keywords
A. Dark conductivity; B. Cryostat pressure; C.Surface effect
First Page
265
Last Page
270
Recommended Citation
AY, İLKER and TOLUNAY, HÜSEYİN (2001) "Vacuum Cryostat's Pressure Dependent Dark Conductivity Measurements on a-Si:H and a-SiN:H Films," Turkish Journal of Physics: Vol. 25: No. 3, Article 11. Available at: https://journals.tubitak.gov.tr/physics/vol25/iss3/11
