Turkish Journal of Physics
DOI
-
Abstract
The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes into account both the drift and diffusion part of the overall drain current. The normalised drain current and normalised transconductance are found to be greatly affected by the carrier concentration dependant mobility.
First Page
137
Last Page
142
Recommended Citation
EROL, MUSTAFA (2001) "Effect of Carrier Concentration Dependant Mobility on the Performance of High Electron Mobility Transistors," Turkish Journal of Physics: Vol. 25: No. 2, Article 8. Available at: https://journals.tubitak.gov.tr/physics/vol25/iss2/8
