Turkish Journal of Physics
DOI
-
Abstract
Junctions were fabricated in vacuum of about $10^{-5}$ Torr by thermal evaporation of Sb or Bi onto chemically etched $p$-type silicon (100) substrates. The electrical properties were studied by current voltage (I-V) measurements. Some of the Sb and Bi junctions were heated-treated for $\frac{1}{2}$ hr at 200 and 150^oC, respectively. The barrier height (BH) was equal to 0.64 eV for both as-deposited and heat-treated Sb junctions, while it was 0.56 and 0.74 eV for as-deposited and heat-treated Bi Junctions, respectively. These observatimons indicate that for Sb junctions, annealing at a temperature of 200^oC resulted only in partial elimination of any interfacial layer (oxide), while it modified the density of interface states. On the other hand, for Bi junctions, heat-treatment at 150^oC eliminates completely the oxide layer, while also modifying the density of interface states.
First Page
715
Last Page
724
Recommended Citation
OBERAFO, A. A. and ZIRIKI, A. Z. (2000) "Barrier Heights of Antimony / and Bismuth / P -Silcon (100) Junctions," Turkish Journal of Physics: Vol. 24: No. 6, Article 5. Available at: https://journals.tubitak.gov.tr/physics/vol24/iss6/5
