Turkish Journal of Physics
Abstract
Junctions were fabricated in vacuum of about $10^{-5}$ Torr by thermal evaporation of Sb or Bi onto chemically etched $p$-type silicon (100) substrates. The electrical properties were studied by current voltage (I-V) measurements. Some of the Sb and Bi junctions were heated-treated for $\frac{1}{2}$ hr at 200 and 150^oC, respectively. The barrier height (BH) was equal to 0.64 eV for both as-deposited and heat-treated Sb junctions, while it was 0.56 and 0.74 eV for as-deposited and heat-treated Bi Junctions, respectively. These observatimons indicate that for Sb junctions, annealing at a temperature of 200^oC resulted only in partial elimination of any interfacial layer (oxide), while it modified the density of interface states. On the other hand, for Bi junctions, heat-treatment at 150^oC eliminates completely the oxide layer, while also modifying the density of interface states.
DOI
-
First Page
715
Last Page
724
Recommended Citation
OBERAFO, A. A. and ZIRIKI, A. Z. (2000) "Barrier Heights of Antimony / and Bismuth / P -Silcon (100) Junctions," Turkish Journal of Physics: Vol. 24: No. 6, Article 5. Available at: https://journals.tubitak.gov.tr/physics/vol24/iss6/5
