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Turkish Journal of Physics

Authors

M. B. TAGAEV

DOI

-

Abstract

We investigated the effect of ^{60}Co \gamma-irradiation (doses from 10^2 to 2 \times 10^6 Gy), both without and with heat annealing, on silicon IMPATT diode parameters. It is shown that such treatments improve the diode characteristics (particularly decrease the reverse current and increase both the output and the diffusion length of the minority charge carriers) due to radiation-enhanced processes.

First Page

985

Last Page

988

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