Turkish Journal of Physics
DOI
-
Abstract
Heteroepitaxial Ge_x Si_{1-x} alloy layers have been formed by 10 ms and 300 \mu s laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å are thermally evaporated onto Si(111) under vacuum pressure \sim 10^{-5} Torr. The near surface of the sample then undergoes rapid melting and regrowth processes during each pulse from a free running Nd; YAG laser. The alloy layers are (4.6-6.5) \mum thick and have a Ge fraction of x = 6-8.2%.
First Page
951
Last Page
958
Recommended Citation
AL-RAWI, R. N.; ISMAIL, R. A.; and MOUSIS, R. N. (1999) "Feasibility of Fabrication of Heteroepitaxial Ge_x Si_{1-x}/Si(111) structure by Pulsed Nd: YAG Laser," Turkish Journal of Physics: Vol. 23: No. 6, Article 1. Available at: https://journals.tubitak.gov.tr/physics/vol23/iss6/1
